

1. Combining tank‑soaking treatment with single‑wafer spin‑spraying to improve processing capacity
2. High‑pressure or two‑fluid spraying achieves complete photoresist stripping
3. Substrate workflow: dry‑in, wet‑transfer, dry‑out
4. Photoresist stripper is recovered, circulated, filtered and reused to reduce operating costs
5. Precious‑metal recycling function
Mainly adopted for photoresist‑stripping processes of compound semiconductors, power devices, MEMS, advanced packaging, RF integrated circuits, Micro‑LEDs and optical‑glass substrates
Machine Model | Photoresist‑Stripping Machine LF12-XS3MRS1A |
Cassette Quantity | 2CS&2LP |
Configuration | 1Soak+1Stripper+1Cleaning |
Wafer Type | Round Wafers, Square Wafers |
Wafer Size (mm) | 50-300 |
Throughput(WPH) | 40 |
Chemical Solvents | NMP、DMSO |
Substrate Material | Si、Glass、Sapphire、GaN、GaAs、SiC、LiTaO3、Li3PO4 |
Applicable Processes | Lift-Off、Stripper |
Drying Mode | Spin Dry+N2 Dry |