

1. Long depth‑of‑focus to cope with wafer warpage
2. High‑precision processing system
3. Fully automatic loading and unloading for high speed processing
4. Low‑damage machining and high yield
5. Real‑time adjustment and storage of process‑parameters are supported.
Laser lift‑off processing for flat substrates of silicon‑base or metal, and DPSS wafers.
Machine Model | Led Laser Lift-off Equipment |
Workpiece Size | 4/6 inch Wafer |
Processing Speed | 2400~3200mm/s |
Processing Accuracy | ±1.5μm |
Stage | 400*600mm |
Laser Frequency | 200khz |
Tact Time | 140s (4-Inch Wafer, Excluding Loading/Unloading) |
Equipment Utilization Rate | 98% |
Mean Time Between Critical Failures (MTBCF) | ≥ 2 Hours |
Production Yield | 95% |
Galvo & Control System | Max. Speed: 5000mm/S |
Processing Mode | Spiral Inward + Circular Linear Filling |